Self aligned silicide
WebJan 1, 2011 · Side-wall spacers were formed to allow a self-aligned silicide formation (SALICIDE) process. Silicidation was obtained, in an RTP system, via a solid-solid reaction … WebJul 20, 2004 · Along with several other technological innovations, the implementation of the self-aligned silicide technology paved the way for a rapid and successful miniaturization …
Self aligned silicide
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WebDec 1, 2005 · Self aligned silicides (salicides) are used for logic ULSI devices ( Fig. 1 (a)) to reduce sheet resistance and to achieve low contact resistance on gate, source (S) and drain (D) areas. S/D contacts are borderless to the silicide and the contact-resistance is not critical due to metal/metal (i.e., W/silicide) contacts. WebA field effect transistor includes a source region and a drain region formed within and/or above openings in a dielectric capping mask layer overlying a semiconductor substrate and a gate electrode. A source-side silicide portion and a drain-side silicide portion are self-aligned to the source region and to the drain region, respectively.
WebOct 1, 1986 · Abstract Successful utilization of a titanium self‐aligned silicide (salicide) process for reproducible device fabrication with high yield requires junction leakage due to the silicide process... WebApr 24, 2007 · In this letter, the authors describe both a growth method for self-aligning copper silicide (Cu 3 Si) nanobeams and their use as active catalysts for carbon nanotube …
WebDec 1, 2008 · Abstract. The oxidation of nickel silicide during selective wet etch is investigated for stable contact resistance. This paper describes chemical reactions of nickel–platinum alloy silicide ... WebThe finding that nickel silicide (Ni 2Si) can be self-aligned to contact holes to silicon carbide (4H-SiC)1,2 has opened up new research opportunities. An example of such a …
Webself-aligned ohmic contacts to p-type. It is known from the mature silicon technology that, in addition to nickel silicide,9–11 titanium-,10–13 cobalt-10,11,13 and platinum-silicide14 can be self-aligned. Given the similarities between silicon and 4H-SiC, some or all of the silicides that can be self-aligned to silicon can be self-aligned ...
WebSuccessful utilization of a titanium self‐aligned silicide (salicide) process for reproducible device fabrication with high yield requires junction leakage due to the silicide process to be minimized. The microstructure and microchemistry of titanium salicide shallow junction diodes were studied and correlated with junction leakage. john wayne love affairsWebA method of forming a semiconductor including forming a source/drain feature adjacent to a semiconductor layer stack disposed over a substrate. The method further includes forming a dummy fin adjacent to the source/drain feature and adjacent to the semiconductor layer stack. The method further includes performing an etching process from a backside of the … john wayne loversWebOct 21, 2004 · As the critical dimension goes down to sub micron range, salicide (self-aligned-silicide) technology has become a crucial step in the fabrication process of ultra-high-speed CMOS devices. Among salicides processes, nickel salicide is recently becoming an appealing candidate to replace the traditionally used TiSi/sub x/ and CoSi/sub x/ in … how to handle problemsWebSilicide definition, a compound of two elements, one of which is silicon. See more. john wayne loved to playThe description "self-aligned" suggests that the contact formation does not require photolithography patterning processes, as opposed to a non-aligned technology such as polycide. The term salicide is also used to refer to the metal silicide formed by the contact formation process, such as "titanium salicide", although … See more The term salicide refers to a technology used in the microelectronics industry used to form electrical contacts between the semiconductor device and the supporting interconnect structure. The salicide process involves the … See more The salicide process begins with deposition of a thin transition metal layer over fully formed and patterned semiconductor … See more • Self-aligned gate See more Another challenge facing successful process integration include lateral growth, especially underneath the gate, which will short circuit the device. See more john wayne lost filmsWebA manufacturable self-aligned titanium silicide process which simultaneously silicides both polysilicon gates and junctions has been developed for VLSI applications. The process produces silicided gates and junctions with sheet resistances of 1.0-2.0 Ω/square. This paper describes the application of the self-aligned titanium silicide process to NMOS … how to handle problematic employeesWebDec 5, 2008 · These reactions depend on the nature of silicide phases and selective etch process parameters. For silicide formation conditions such as silicidation temperature, a … john wayne lung removal